| 摘要 |
PURPOSE:To simplify manufacturing processes, and to shorten production time by providing two-time mask processes of the mask process of the formation of a P channel side gate electrode and a mask for injecting source-drain and the mask process of the formation of an N channel side gate electrode and a mask for injecting source- drain. CONSTITUTION:A photo-resist 30 is formed through a first photo-mask process, a conductor layer 15 shaped onto a substrate is etched to form a gate section 17 and a wiring section 18 for a MOS transistor on the main surface of an N-type region, and the upper section of a P-type region 12 in a reverse conduction type region is all coated with the photo-resist 30 at that time. Boron is introduced into an N-type region 11' in the periphery of the gate section 17 to shape source-drain regions 20 in the P channel MOS transistor. The photo-resist 30 is removed, the upper section of the PMOS transistor is all coated with a photo-resist 31 through a second photo- mask process, the photo-resist 31 is left only on a gate section and a wiring pattern section on an NMOS transistor forming section, and the conductor layer 15 is etched to shape the gate section 17' and a wiring section 18'. Arsenic is introduced into the P-type region 12 to form source-drain regions 22. |
