| 摘要 |
PURPOSE:To improve the temperature stability of substrates and to provide a vapor growth layer with uniform thickness and characteristics, by heating preliminarily the substrates with the heat from the uniformly heating tube or the radiation energy from the heating source while reaction gas is conducted along the uniformly heating tube. CONSTITUTION:The rotary shaft 13 as well as the seal plate 3 is lowered, the buffer plate 14 is positioned below the base plate 1, the substrate supporting jig 16 having substrates 17 set thereon is set on the buffer plate 14, and the seal plate 3 is pressed to the base ring 2 to shut the reaction vessel 5. Next, the heating source 11 is activated to heat the uniformly heating tube 10 while the rotary shaft 13 is rotated, so that the inside of the reaction vessel 5 can be heated owing to the heating of the tube 10. Infrared rays resulted from the tube 10 and substrates 17 are absorbed into the buffer plate 14 to heat it, and thus heat uniformly the surrounding of the substrates 17. In this way, the temperature of the reaction gas nears easily to the vapor growth temperature, enabling to form a vapor growth layer without disturbing the substrate temperature. |
