| 摘要 |
PURPOSE:To obtain a Groups II-VI compound semiconductor crystals having a high crystal growth rate with little defects, by adding an element of Group VI and Te to a solution containing polycrystal grains present therein, and adjusting the specific gravity. CONSTITUTION:A heat sink 1 consisting of carbon free of residual impurities is put in a quartz tube 6, and a substrate 2 is placed on the heat sink 1 to secure the substrate 2 with a quartz tube 3. After evacuation, the quartz tubes 6 and 3 are fused at a fusing part 8. An element of Group VI, Te 5 and polycrystal grains 4 are put into the tube 6 to adjust the specific gravity of the resultant solution to a higher value than that of the aimed Groups II-VI compound. The mouth of the tube 6 is then vacuum-sealed. The heat sink part 1 is turned upward, and melting is carried out. The sealed part of the tube 6 is turned upward with the side of the heat sink part 1 down to provide a temperature gradient and grow the aimed Groups II-VI compound semiconductor crystals on the substrate 2 by the epitaxial method.
|
