| 摘要 |
PURPOSE:To improve the quality of the semiconductor device by stabilizing a junction resistance of an ohmic electrode at low level by providing the structure in which the ohmic electrode joined to the semiconductor fills the recess formed in the semiconductor. CONSTITUTION:In a P-type region 4, an annular recess 8 whose internal diameter D1 is 7mum, external diameter D2 is 90mum, depth H is 1mum and whose cross- section is rectangular is formed and a P-electrode 6a is formed in a manner it fills said recess 8. The junction area of the P-electrode 6a thus formed to the P-type region 4 extends and a junction resistance is reduced and stabilized according to the quantity of the extension. |
