发明名称 Method of making thin film device
摘要 A thin film device such as an amorphous thin film solar battery is easily made with high integration by use of metal-diffused regions in the thin film as an electrical connection region across the thickness of the thin film. By use of such metal-diffused regions 24, 24 . . . for connection between transparent stripe shaped electrodes 21', 21'. . . disposed between glass substrate 20 and amorphous silicon thin film 23 and stripe shaped metal electrodes 25, 25 . . . on the top surface of the thin film 23, series connected solar battery cells can be made with a small number of process steps.
申请公布号 US4624045(A) 申请公布日期 1986.11.25
申请号 US19850716604 申请日期 1985.03.27
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 ISHIHARA, SHINICHIRO;HIRAO, TAKASHI;MORI, KOSHIRO;ONO, MASAHARU;KITAGAWA, MASATOSHI
分类号 H01L31/042;H01L23/535;H01L27/142;H01L31/0224;H01L31/04;H01L31/20;(IPC1-7):H01L31/18;H01L27/14 主分类号 H01L31/042
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