| 摘要 |
PURPOSE:To improve memory holding characteristic and to highly integrate a memory cell by forming the first silicon nitride film, then forming the second silicon nitride film by a vapor phase growing method on the basis of a plasma exciting reaction of a silicon compound and ammonia. CONSTITUTION:After an element separating field oxide film 4 is formed on a P-type silicon substrate 1, an extremely thin silicon film 5 to become a tunneling medium, a silicon nitride film 6 and a gate electrode 7 are sequentially laminated and formed. Then, with the electrode 7 and the film 4 as masks N-type impurity ions are implanted to form a source 8 and a drain 9. then, a plasma silicon nitride film 10 is formed by a plasma vapor phase growing method on the basis of a plasma exciting reaction of silicon compound such as silane and an ammonia. Then, an interlayer insulating film 11, a contacting hole, a metal wiring layer 12 and a protective film 13 are formed. |
