SINGLE CRYSTAL SUBSTRATE OF GALLIUM ARSENIDE

摘要

PURPOSE:To obtain a single crystal substrate of GaAs providing an epitaxial wafer having extremely improved surface state and uniformity, having the plane orientation of the substrate with a plane inclining by a specific degree in the <100> direction included in the plane from the {100} plane. CONSTITUTION:A single crystal plate of GaAs having the crystallographic plane orientation on the surface of the substrate with a plane inclining by 1 deg.-6 deg. in the <100> direction included in one {100} plane from the {100} plane. When the substrate is subjected to liquid-phase epitaxial growth, (A) the number of projections caused by abnormal growth observed on the surface of the substrate is reduced to 1/2-1/3 that of the projections using an existing substrate and their size is also diminished. (B) The substrate has improved uniformity of the thickness of the epitaxial layer. (C) The substrate can provide an epitaxial wafer having extremely improved surface state and uniformity as shown in improved uniformity of carrier concentration in the epitaxial layer, etc.