发明名称 Semiconductor memory device.
摘要 <p>@ In a semiconductor memory device, a decoder circuit (1) is located between first (3) and second (5) memory cell arrays. A sequence of driver circuits (121,122...) in the decoder circuit (1) provides driver circuits common to the first and second memory cell arrays. An output terminal (1211 a,1211b,1221a,...) of each driver circuit is connected directly to a data input/output portion (2) for the first memory cell array (3) and connected to another data input/output portion (4) for the second memory cell array (5) via wirings (141 a, 141 b, 142a, ...) traversing the decoder circuit (1 ).</p>
申请公布号 EP0201185(A2) 申请公布日期 1986.11.12
申请号 EP19860302306 申请日期 1986.03.27
申请人 FUJITSU LIMITED 发明人 SATO, KIMIAKI;TAKEMAE, YOSHIHIRO;NAKANO, MASAO MEZON HISASUE 506;KODAMA, NOBUMI FUJITSU DAI-GO NAKAHARA-RYO
分类号 G11C11/413;G11C7/10;G11C7/12;G11C8/10;G11C11/401;G11C11/407;(IPC1-7):G11C11/40 主分类号 G11C11/413
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