发明名称 DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER
摘要 PURPOSE:To enable to regulate the projecting angle of laser projection light, by making the shape of at least one of light projecting end faces a paraboloid or circle including an ellipse. CONSTITUTION:After a mesa is formed, a P-type InP buried layer 7, N-type InP buried layer 8 and P-type InGaAsP cap layer 9 are sequentially grown by liquid phase growing. After a Cr-Au electrode 10 and AuGeNi-Cr-Au electrode 11 are deposited, the section of the end face projection laser light is made curved 12. In this way, by making the shape of the light projecting end face a paraboloid or circle including an ellipse, a lens effect for the laser projecting light at this section can be utilized to reduce the projecting angle. Moreover, by varying the form such as the curvature of the curved section of the light projecting face, the projecting angle can be regulated.
申请公布号 JPS61253881(A) 申请公布日期 1986.11.11
申请号 JP19850095433 申请日期 1985.05.07
申请人 HITACHI LTD 发明人 KANAI MIYO;KAYANE NAOKI;OISHI AKIO;TSUJI SHINJI
分类号 H01S5/00;H01S5/026;H01S5/10;H01S5/12 主分类号 H01S5/00
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