| 摘要 |
PURPOSE:To contrive to form a semiconductor device into a small size and a thin type by a method wherein the gap between two pieces of the mutually opposed semiconductor elements in a surface-to-surface symmetry is covered with a thermosetting resin in a state that the lead materials are held between the bonding pads on the surfaces of the elements, the gap between the elements is made smaller, and the amount of intrusion of alpha rays is lessened. CONSTITUTION:In each bonding pad on the surfaces of semiconductor elements 1 and 1' having patterns A and B to be formed in a surface-to-surface symmetry, an external electrode 6 of Al and so forth is made to expose from the window 5 of a surface protective film 4, a metal film 7 of a Ti-Pd-Pb-Sn alloy solder is evaporated thereon, then the pattern of the three-layer metal film 7 is selectively formed larger than the pad 3. Then, the element 1 is made to connect its inner leads 8 with film carriers 9 in a reducing atmosphere of H2 gas and the element 1' is made to oppose to the element 1 holding the inner leads 8 between the elements 1 and 1' and is made to connect its inner leads 8 with the film carriers 9. The outer leads of the film carriers 9 obtained are connected to lead frames 10 and the semiconductor device is completed by molding the gap between the elements with a resin 11. In the memory device to be constituted in this structure, the probability of the generation of a soft error due to alpha rays to generate from the peripheral materials is extremely low because the gap between the elements is small. |
