| 摘要 |
PURPOSE:To enable a normally-on type while reducing power consumption and improving the degree of integration by adding an N-type impurity into a gallium-arsenic semiconductor layer to which a two-dimensional electron channel is formed. CONSTITUTION:A gallium-arsenic layer 2 to which an impurity to not added is grown on a substrate 1 in approximately 0.4mum, and a gallium-arsenic semiconductor layer 3 containing a substrate such as silicon in approximately 3X10<17>cm<-3> as an N-type impurity is grown in 500Angstrom . An aluminum-gallium- arsenic semiconductor layer 4 is grown in approximately 400Angstrom , and a metal or a metallic compound such as tungsten-silicide is evaporated to form a gate electrode 5. Ohmic electrodes consisting of gold-germanium-nickel are evaporated to shape a source electrode 6 and a drain electrode 7. In the field-effect transistor, two-dimensional electrons 8 are formed in the gallium-arsenic semiconductor layer 3, to which the N-type impurity is added, under the gate electrode 5, thus bearing amplification action.
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