| 摘要 |
<p>A dynamic memory array (50) includes plural sets of spaced apart address lines (56, 58; 52, 54) and storage locations (62, 64, 66, 68) defined by crossovers of members of the plural sets of address lines. At each storage location a charge storage means (92) is coupled to a threshold means - (70). The charge storage means are addressable through the threshold means (70) by the application of selected potentials to the plural sets of address lines. The charge storage means and the threshold means can be formed as vertically arrayed, deposited, layers (52, 92a, 94a, 96, 98, 100) of semiconductor materials, and preferably from amorphous semiconductor alloys. Also disclosed is a light influencing display (400) having an improved bidirectional threshold isolation means.</p> |
