Compound semiconductor device.

摘要

In a compound semiconductor device such as field effect transistor (100), the channel region of which comprises alternate compound semiconductor layers (11, 12, 13) having different lattice constants so that crystal structure or atomic arrangement of the compound semiconductor is changed for changing the energy band structure of the semiconductor of any one of the alternate layers (11, 12, 13) to increase the electron mobility in the compound semiconductor layer of the channel region.