| 摘要 |
<p>PURPOSE:To perform electric connections or disconnections any times as required by aligning in parallel metal layers near the surface layer of a semiconductor device of integral structure, and forming a connecting path due to the presence of low melting point metal moistened with the metal layer but not moistened with the surface layer. CONSTITUTION:A low melting point metal 6 which is moistened with electrode metal in a melted state and not moistened with a surface layer of a semiconductor substrate 1 is provided between a pair of electrode metals on the surface layer, and the metal 6 is melted, extended in the moistened state, and connected between electrode metals. The metal 6 is remelted at disconnecting time, and electrically cut between electrode metals by absorbing. When the connecting point is again connected, the metal 6 may be melted and dropped between the metals. When again disconnected between the metals, the metal 6 exists between the metals may be again absorbed.</p> |
