| 摘要 |
PURPOSE:To obtain the epitaxial layer having uniform film thickness by a method wherein, when an opitaxial layer is grown on an Si wafer, the raw gas feeding pipe to be provided under a wafer is formed in the double construction consisting of the inner and the outer pipes, a number of nozzles penetrating the outer pipe are provided on the inner pipe, and raw gas is fed into the inner pipe and carrier gas is fed into the outer pipe in such a manner that they are running in the opposite direction with each other. CONSTITUTION:A number of sets of Si wafers laminated with epitaxially grown surface positioned outside are disposed in upright state in a reaction pipe 2 surrounded by a ring-shaped resistance heating furnace 3 leaving the prescribed intervals using a quarts boat which is not shown in the diagram. Then, a gas feeding pipe is provided on the lower side of said quzrtz boat. At his time, the feeding pipe id formed in double structure consisting of the inner pipe 41 and the outer pipe 42, and a number of nozzles 5 opened on the boat side and penetrating the outer pipe 42 are provided on the inner pipe 41. Through these procedures, the flow of gas is reversed with each other, H2 carrier gas runs in the inner pipe 41, it is flowed into the reaction pipe 2 from the gap located between the nozzles 5, and the raw gas such as SiCl4 and the like is fed from the outer pipe 42. As a result, the temperature of the wafers 5 can be made uniform. |
