| 摘要 |
PURPOSE:To reduce cost by plating an silicon chip mount section for an IC package, in which a metallic surface is plated with Au, with a Co-Ni alloy and plating the Co-Ni alloy with Au. CONSTITUTION:An silicon chip mount section for an IC package in which the upper section of a metallic surface is which the surface of a ceramic substrate is metallized by a material mainly comprising metals such as W and Mo is plated with Au is plated with an alloy consisting of 2-60wt% Co as a foundation for Au plating and Ni as the remainder, and the upper section of the plating of the alloy is plated with Au in not more than 2mum thickness. 7-40% is particularly preferable as the content of Co in the alloy. When the silicon chip mount section is treated in a non-oxidizing atmosphere at 700 deg.C or higher after plating, a plating film is compacted, and adhesive properties with the foundation for a plating layer are improved. A replenishing liquid at a Ni/Co ratio smaller than a Ni/Co ratio in a plating liquid at all times is added in order to keep a Ni/Co ratio in a plating film constant. Accordingly, cost can be reduced. |
