| 摘要 |
PURPOSE:To bring phase difference among respective laser operating sections to 0 deg. by forming sections among several laser operating sections in index waveguide structure, in which index difference consisting of only actual number sections is shaped, and reducing optical loss in regions among respective laser operating sections. CONSTITUTION:With a semiconductor laser array element, current flow only through a plurality of P-type impurity diffusion regions 27, and laser oscillation is conducted in an active layer 24 just under the regions 27. Recessed sections are formed on the growth surface of an N-clad layer 23 while being subject to the effect of the shapes of striped rectangular grooves 22 shaped to a GaAs substrate 21. Consequently, the active layer 24 grown while using the N-clad layer 23 as a foundation layer is curved to a recessed form along the rectangular grooves 22 in the groove sections. Desired index difference is acquired by properly setting the curvatures of the curved sections of the active layer, and each resonator is oscillated at a fundamental transverse mode, and the semiconductor laser array element, loss thereof among laser operating sections is reduced and stabilized and which has bonds by 0 deg. phase difference, is obtained.
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