| 发明名称 |
Method for passivating an undercut in semiconductor device preparation. |
| 摘要 |
<p>A method, useful in fabricating semiconductor integrated circuits, for passivating an undercut formed by etch-back of a silicon dioxide layer (2) under a diverse insulator layer (3) is disclosed. The method includes the step of coating the device with a thin, conformal film (7) to a thickness sufficient only to line, without refilling, the lateral walls of the undercut region.</p> |
| 申请公布号 |
EP0195970(A2) |
申请公布日期 |
1986.10.01 |
| 申请号 |
EP19860103032 |
申请日期 |
1986.03.07 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AHLGREN, DAVID CUTLER;MA, WILLIAM HSIOH-LIEN;REVITZ, MARTIN |
| 分类号 |
H01L21/033;H01L21/28;H01L21/314;H01L21/318 |
主分类号 |
H01L21/033 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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