| 摘要 |
PURPOSE:To measure non-destructively a latch-up rating of a CMOS IC by increasing gradually a peak value of a discharge pulse, catching a peak value of a power source current which has increased suddenly at some point, and measuring the latch-up rating from the peak value of the discharge pulse of that time. CONSTITUTION:By executing an operation several times, a pulsative power source current 15 is generated. A peak value of this power source current 15 is detected by a current detecting resistance 38, amplified by a differential amplifier containing an operational amplifier 51, and in comparators 52a-52e, that which a reference voltage being lower than an output of the differential amplifier has been applied to is transmitted to a CPU through an encoder 54. The CPU stops the operation, in case when it is decided that the peak value of the power source current 15 has reached a state that latch-up is generated, and based on the peak value of this last discharge pulse, a latch-up rating is obtained.
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