| 摘要 |
PURPOSE:In the title system using an organic compound of an element in the group II as a dopant, the pipe for the organic compound is separated from the pipe for the compounds of elements in the group V to improve the control accuracy in dopant content. CONSTITUTION:A compound containing an element in the group C such as PH3 is introduced from pipe 2 and an organic compound of an element in the group II such as a diethyl zinc as a dopant is introduced from the pipe 1 into the quartz reactor tube 7 provided with In source part and Ga source part. Further, HCl gas for carrying In is introduced from pipe 3 and HCl gas for carrying Ga is introduced from pipe 4 to effect epitaxial crystal growth of gamma-type InGaP on the GaAs base crystal 5. Since the pipe for the dopant is separated from the pipe for the V group-element compounds, the dopant content and crystal liquid composition are controlled with improved accuracy.
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