| 摘要 |
PURPOSE:To set a breakdown voltage at a stable value, by deeply forming a high concentration impurity region in a collector region, and providing a protecting diode, which has a P-N junction having a broad current path between a base region and the collector region, in a semiconductor device. CONSTITUTION:In the surface of a collector region 1 neighboring a base region 2, P<+> type high concentration impurites of boron and the like having the same conducting type as the region 1 are doped by an ion implanting method. A P<+> type high concentration impurity region 4' is deeply formed by high temperature heat treatment. By the formation of the region 4', a P-N junction part 9' is formed between the region 2 and the region 4'. A protecting diode is formed within the semiconductor device. A surge absorbing circuit, wherein a protecting diode 10 is connected between a collector and a base, is constituted. Thus the semiconductor device itself is protected against the surge current. Since the current path at the junction part 9' becomes broad, the breakdown voltage is not fluctuated in correspondence with a reverse voltage when the reverse voltage is applied across the collector and the base. Therefore, the stable withstanding voltage can be set.
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