发明名称 MULTI-VALUE DYNAMIC RANDOM ACCESS MEMORY
摘要 PURPOSE:To easily construct an N value sense amplifier by maintaining (N-1) bit lines for a reference with respect to one bit line when judging a signal having a value of N. CONSTITUTION:Bit lines in which a signal appears by one word line 110 are 101 and 105 which are the bit lines every four, namely three bit lines are present between said bit lines. At this time, in the bit lines 102-104 held between the bit lines 101, 105, a signal of a memory cell is not produced. The word line and the bit lines are arranged in a matrix and by selecting any word line, the bit line producing an activated bit line is arranged at three bit line intervals.
申请公布号 JPS61196499(A) 申请公布日期 1986.08.30
申请号 JP19850035983 申请日期 1985.02.25
申请人 SEIKO EPSON CORP 发明人 HASHIMOTO MASAMI
分类号 G11C11/56;G11C11/34 主分类号 G11C11/56
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