Low temperature sintered ceramic capacitor with high DC breakdown voltage, and method of manufacture

摘要

A monolithic ceramic capacitor having a higher DC breakdown voltage per unit thickness of the dielectric ceramic body than heretofore. The major ingredient of the ceramic is expressed as {(Ba1-x-yCaxSry)O}k(Ti1-zZrz)O2, where x, y, z and k are numerals in the ranges specified herein. To this major ingredient is added a minor proportion of a mixture of boric oxide, silicon dioxide and at least one metal oxide selected from among BaO, SrO and CaO, in specified ranges of proportions. For the fabrication of capacitors having dielectric bodies of the above composition, the moldings of the mixture of the major ingredient and additives in the specified proportions are sintered to maturity in a reductive or neutral atmosphere and then reheated at a lower temperature in an oxidative atmosphere. The sintering temperature can be so low (1000 DEG -1200 DEG C.) that the moldings can be cosintered with base metal electrodes buried therein.