| 摘要 |
PURPOSE:To ensure high withstanding voltage even when an internal circuit is fined by shallowing the junction depth of a source and a drain in a transistor in the internal circuit and deepening it in input-output circuits. CONSTITUTION:The manufacture of a semiconductor device consists of four processes of a process, in which the region of a transistor 7' is coated with a resist layer 9, a process, in which phosphorus or arsenic ions are implanted to the region of a transistor 7 while using the resist layer and a gate electrode 4 as masks to form source-drain 6 having deep junction depth, a process, in which the resist layer in the transistor 7' region is removed and a resist layer 9' is applied to the region of the transistor 7, and a process in which phosphorus or arsenic ions are implanted while employing a gate electrode 4' and the resist layer 9' as masks to shape source-drain 6' having shallow junction depth in the region of the transistor 7'. The resist layer 9' is removed after said processes, and the processes are transferred to a growth process for a field oxide film 2 through a vapor phase growth method. The source-drain 6, 6' may be shaped through a diffusion, and they may be formed regardless of order. |
