| 摘要 |
PURPOSE:To form a dense boron nitride film of high purity at a high rate of film formation when a boron nitride film is produced on the surface of a substrate by a vapor phase reaction in a reaction chamber, by regulating the total amount of oxygen and carbon atoms in the reaction chamber. CONSTITUTION:A substrate is placed in a reaction chamber, gases for producing boron nitride are introduced, and a boron nitride film of pyrolytic boron nitride or hexagonal boron nitride is produced on the surface of the substrate by a vapor phase reaction. At this time, the total amount of oxygen and carbon atoms in the reaction chamber is regulated to <=100ppm, and the substrate is kept at 400-1,400 deg.C, preferably 700-1,300 deg.C. The reaction chamber is evacuated beforehand to <=1X10<-5>mmHg degree or vacuum. A boron nitride film of high quality is produced at a low cost with high productivity. |
