| 摘要 |
<p>PURPOSE:To improve the initial conversion efficiency and to prevent the deterioration of the conversion efficiency due to the projection of light, by simultaneously mixing phosphorus and boron in the I layer of a P-I-N type amorphous silicon solar battery. CONSTITUTION:On an insulating substrate 1 made of ceramics and the like, a metal electrode 2 comprising titanium, molibdenum or the like is formed by using a sputtering method or an electron beam method. Then, an amorphous silicon layer 3 is formed on the metal electrode 2 by a plasma CVD method. In the layer 3, an N layer 31 having a thickness of 300Angstrom , an I layer 32 having a thickness of 5,000Angstrom and a P layer 33 having a thickness of 100Angstrom are sequentially formed. At this time, the N layer 31 is formed by using a raw material gas, in which phosphine, whose flow rate ratio with respect to silane is 0.2%, is mixed. The I layer 32 is formed by using a raw material gas, in which diborane is mixed to the maximum concentration of 10ppm with respect to silane. The P layer 33 is formed by using a raw material gas, in which diborane, whose flow rate ration with respect to silane is 0.2%, is mixed. A film made of tin indium oxide, tin oxide or the like, which also serves the role of reflection preventing film, is formed on a transparent electrode 4 on the light incident side to a thickness of 700-800Angstrom .</p> |
