| 摘要 |
PURPOSE:To obtain a semiconductor device, which has high reliability and cost thereof is low, by using a copper or copper alloy film as an electrode wiring for the semiconductor device. CONSTITUTION:An silicon oxide film 22 is formed onto the surface of an silicon substrate 21, a diffusion layer 23 is shaped through a contact hole bored to the silicon oxide film 22, and a first electrode wiring 24 is formed onto the silicon oxide film 22 by silicon, an silicide or the like. A copper wiring 26 is shaped through an inter-layer insulating film 25, a surface protective film 27 is formed, a hole for a pad section is bored to the surface protective film 27, the pad section 28 is shaped, and the surface of an electrode in the pad section 28 is formed by copper. Accordingly, connecting performance with an aluminum wire or a gold wire in the pad section is not damaged, and reliability can be improved and cost reduced. |
