| 摘要 |
PURPOSE:To remove arsenic, which is attached and deposited in a device simply and safely, by evaporating the deposited arsenic by heating in a high vacuum, attaching the arsenic to low temperature copper or copper alloy, heating the copper or copper alloy, yielding metal compound of the copper and the arsenic, and taking out the compound to the outside of the device. CONSTITUTION:When part replacement or work such as maintenance is required, the inside of a molecular-beam crystal growing device 1 is made to be super-high vacuum stable of about 10<-6>-10<-11>Torr. A shroud 8 and a substrate holder 3 are heated. A deposited material 9 of attached arsenic is evaporated. Meanwhile liquid nitrogen is put in a liquid nitrogen well 12. A copper net 11 is cooled. The evaporated arsenic is attached to the copper net 11 and aggregated. The liquid nitrogen in the liquid nitrogen well 12 is taken out. Thereafter, a rod shaped heated is inserted in the liquid nitrogen well, and the copper net 11 is slowly heated to 100-300 deg.C. By this heating, a metal compound Cu3As of the arsenic is yielded on the copper net 11. The arsenic is taken into the copper. After the reaction, the copper net 11 is cooled and taken out of the device. |
