| 摘要 |
A method of manufacturing a semiconductor device including the steps of forming a passivation film, which has an opening exposing that region of the interlayer insulation film formed on the fuse element, which corresponds to the region to be melted of fuse element, melting the region of the fuse element to be melted by radiating a laser beam on the exposed region of the interlayer insulation film through the opening, and the step of forming a protective resin layer on the whole main surface of the resultant structure after melting is completed.
|
