FORMATION OF RESIST PATTERN

摘要

PURPOSE:To prevent unnecessary damage to be exerted on an undercoat by forming a film of naphthoquinonediazidosulfonate of a novolak resin on a substrate and exposing it patternwise by selective irradiation of ionizing irradiation. CONSTITUTION:The film of naphthoquinonediazidosulfonate of a novolak resin is formed on the substrate and exposed patternwise to selective irradiation of ionizing irradiation and the unexposed areas are developed with an org. soln. contg. >=50% monochlorobenzene to form a negative type resist. A solvent mixture of isopropanol or cyclohexane may be used as the developing soln. of the unexposed areas, but at least >=50% monochlorobenzene needs to be contained.