| 摘要 |
PURPOSE:To obtain easily a high density and to minimize phenomenon such as blooming and smear by forming a thin film transistor on an (n) type silicon base material, making the a (p) area of the base into a capacitor as a floating area and constituting one picture element with one transistor. CONSTITUTION:A capacitor Cox is composed of an electrode 9, an insulation film 3 and a MOS construction of a (p) area, a bipolar transistor is composed of respective parts of an (n)<+> area 7 as an emitter, a (p) area 6 as a base, an (n)<-> area 5 as a corrector and an area 1, and the (p) area 6 is made into a floating area. A condensed accumulation Vp, which occurs at the (p) area 6, is never attenuated, and by the effect of a bias voltage Vbs, a reading action is executed at a very high speed, and therefore, the output voltage is large, a fixed pattern noise and a random noise due to an output capacity goes to be smaller relatively, and the signal of a very good S/N ratio can be obtained.
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