发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To improve latch-up resistance, by providing an input logic circuit constituted by using a CMOS device and an input circuit including an input protecting diode, and preventing the flowing of a current to the input protecting diode even if an input signal is undershot or overshot. CONSTITUTION:A semiconductor integrated circuit is constituted by the follow ing parts: an input logic circuit 11 including a complementary type metal oxide film semiconductor device having a p well; and oscillator circuit 13; and a voltage doubler rectifier circuit 15, which converts the output signal of the oscillating circuit 13 into DC and supplies the obtained voltage to the p-well. A signal, whose amplitude is (VDD terminal voltage) - (VSS terminal voltage) is oscillated by the oscillating circuit 13. The signal is inputted to the voltage doubler rectifier circuit 15, which is connected to a capacitor 14 and a VSS terminal 16. Thus a constant voltage, which is lower than the VSS terminal voltage, is formed. The output of the voltage doubler rectifier circuit 15 is connected to the p well 12 of the input logic circuit 11. Thus the potential of the p-well 12 can be made lower than the VSS terminal voltage.
申请公布号 JPS61154157(A) 申请公布日期 1986.07.12
申请号 JP19840277343 申请日期 1984.12.27
申请人 NEC CORP 发明人 OFUJI KAZUYOSHI
分类号 H01L27/04;H01L21/822;H01L27/02;H01L27/08;H01L27/092;H03K19/0175 主分类号 H01L27/04
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