发明名称 SEMICONDUCTOR LIGHT-EMITTING DEVICE
摘要 PURPOSE:To incorporate a monitor element simply into a monolithic LD by positively generating beams at a transverse mode (beams except an axial mode), subjecting the beams to loss in a laser chip and detecting the lost beams by the monitor element. CONSTITUTION:A bending section is formed and the radiation of beams in the transverse direction is increased in a laser striped pattern, a p-electrode 5, and a p-electrode 6 for a p-i-n diode is shaped along and near the bending section of the laser striped pattern so as to be easy to receive beams in the transvers direction. A LD and the p-i-n diode use the same active layer, and a bias is applied in the forward direction of the LD and beams leaking in the transverse direction from the active layer are received by the active in the p-i-n diode biassed in the opposite direction and monitored. Both end surfaces of the LD formed in this manner can be shaped by cleavage planes regardless of a monitor element, thus resulting in no lowering of a laser output and no change with time.
申请公布号 JPS61154090(A) 申请公布日期 1986.07.12
申请号 JP19840277518 申请日期 1984.12.26
申请人 FUJITSU LTD 发明人 MAKIUCHI MASAO
分类号 H01S5/00;H01S5/026 主分类号 H01S5/00
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