| 摘要 |
PURPOSE:To obtain a uniform and homogeneous compound crystal film having high purity, easily, by supplying vaporized plural materials to the thermal film-forming chamber having closed top-opening, in a vacuum chamber, and placing a heated substrate to the top-opening thereby forming a compound crystal film, wherein said crystal film is exposed to vacuum once or more times during the deposition of the crystal film. CONSTITUTION:In the case of forming a compound crystal film such as ZnS film, Zn and S are put into the circumferential crucible 4 and the core crucible 5, respectively. Thereafter, Zn and S are heated at or above the respective boiling points to fill the film-forming chamber with the vapor of Zn and S. Whe the pressure in the chamber is raised to a prescribed level, the substrate holder 20 is shifted as shown in the figure B until the substrate-holding part 22 is positioned at the top-opening 25 of the chamber 3. A ZnS crystal film is deposited to the lower face of the substrate 24 by this process. When the ZnS film is grown to an extent, the holder 20 is returned to the position of the figure A to expose the substrate 24 to the vacuum in the vacuum chamber 1 to evaporate and remove the attached impurities. Thereafter, the substrate 24 is shifted again to the position of the figure B to continue the growth of the crystal film until the thickness of the film reaches the prescribed level. |
