发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent electrostatic breakdown of a semiconductor element through no-charging of pure water supplied for cooling purpose by using heated pure water as a liquid for cooling the cutting part of a semiconductor substrate. CONSTITUTION:In a method for manufacturing a semiconductor device wherein a semiconductor substrate is cut continuously with a rotating cutting blade and the semiconductor substrate is split into a narrow semiconductor pieces while the cutting portions are cooled by the liquid, the heated pure water is used as the liquid. Namely, the pure water is heated up to 60 deg.C to 100 deg.C and a specific resistance which is 18MOMEGA-cm at 25 deg.C is lowered to 4MOMEGA-cm to 1.4MOMEGA-cm, preventing generation of static electricity. Various heating methods are considered for heating the pure water, but it must be noted for heating of pure water that a vessel, piping material and a sealing material must be selected sufficiently and the material should not be melted into the pure water while it is heated.</p>
申请公布号 JPS61145840(A) 申请公布日期 1986.07.03
申请号 JP19840269181 申请日期 1984.12.20
申请人 TOSHIBA CORP 发明人 SASAKI SHIGEO
分类号 H01L21/301;H01L21/78;(IPC1-7):H01L21/78 主分类号 H01L21/301
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