| 摘要 |
PURPOSE:To enable to increase the degree of freedom in controlling a superlattice structure as well as to obtain the superlattice semiconductor device which can be manufactured even when the material such as GaAs and AlAs having an excellent degree of coincidence of grating constant is used by a method wherein a unit lattice is constituted by laminating two kinds of semiconductor thin film layers alternately in four or more layers. CONSTITUTION:A unit lattice, consisting of the superlattice whereon two kinds of semiconduc tor are laminated, is formed by alternately laminating said two kinds of semiconductor thin film layer in four or more layers. For example, a superlattice clad layer 1, whereon a 10Angstrom thick N type GaAs layer 14, a 10Angstrom thick N type AlAs layer 13, a 20Angstrom thick N type GaAs layer 12, a 20Angstrom thick N type AlAs layer 14, a 10Angstrom thick N type AlAs layer 13, a 20Angstrom thick N type GaAs layer 12, and a 20Angstrom thick N type AlAs layer 11 are periodically laminated in 150 laters, a superlattice active layer 2 whereon a 40Angstrom thick non-doped GaAs layer 22 and a 10Angstrom thick non-doped AlAs layer 21 are alternately laminated in 10 and 9 layers, and superlattice clad layer 3 whereon a 20Angstrom thick P type AlAs layer 31, a 20Angstrom thick P type GaAs layer 32, 10Angstrom thick P type AlAs layer 33 and 10Angstrom thick P type GaAs layer 32, a 10Angstrom thick P type AlAs layer 33 and 10Angstrom thick P type GaAs layer are periodically laminated in 150, 150, 150 and 149 layers, and a P type GaAs cap layer 10 of 0.5mum in thick ness are continuously grown on a substrate.
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