| 摘要 |
PURPOSE:To obtain a solid state image pick-up device in which the cell area is effectivelly used and high density and high integrating can be executed by making the distance between the first reading means and the second photosensitive picture element closer than the distance between the first reading means and the first photosensitive picture element. CONSTITUTION:The device is composed of photosensitive picture elements 111-118 formed on a semiconductor substrate, an output register 130, a means 131 to read a signal charge accumulated at the photosensitive picture element, and a means 141-152 to read a signal charge from respective picture elements to reading means 131-134. The device is arranged and constructed so that in the figure, a distance (a) between the photosensitive picture element 113 between two reading means and a reading means 131 is closer than a distance (b) between the photographic picture element 114 and the reading means 131. Thus, by using the cell area effectively, the repeating pitch in the V direction can be increased.
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