| 摘要 |
PURPOSE:To improve quality of products and to prevent chip of a glass at the time of assembly by a method wherein the glass is adhered wholely other than prescribed part and thickness of the glass film is specified, also disuse part thereof is removed by etching with the use of a photo-resist as a mask. CONSTITUTION:A P-N junction section 6 is formed by means that the secondary conduction type impurity is diffused on the primary conduction type Si semiconductor substrate 1, the P-N junction section is exposed inside a groove by means that the groove 7 is provided so as to reach to the P-N junction section, then is coated by low melting point glass.
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