发明名称 Semiconductor integrated circuit which allows adjustment of circuit characteristics in accordance with storage data of nonvolatile memory element
摘要 The invention provides a semiconductor integrated circuit, characteristics of which can be adjusted in accordance with storage data in a nonvolatile memory element. The semiconductor integrated circuit has a main semiconductor circuit having MOS transistors, and an adjusting circuit connected to the main semiconductor circuit so as to change the circuit characteristics of the main semiconductor circuit as needed. The adjusting circuit has MOS transistors and a plurality of fuse elements. The adjusting circuit causes a given fuse element to selectively disconnect in accordance with an input signal and generates at least one adjusting signal to adjust the circuit characteristics of the main semiconductor circuit.
申请公布号 US4593203(A) 申请公布日期 1986.06.03
申请号 US19830465034 申请日期 1983.02.08
申请人 TOKYO SHIBAURA DENKI KABUSHIKI KAISHA 发明人 IWAHASHI, HIROSHI;ASANO, MASAMICHI
分类号 H03K5/13;G11C7/14;G11C11/56;G11C16/28;H01L21/82;H03K3/353;H03K3/354;H03K17/687;H03K19/0944;H03K19/173;(IPC1-7):H03K19/094;H03K19/017;H03K5/12;H03K19/20 主分类号 H03K5/13
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