| 摘要 |
PURPOSE:To enable to improve a processing precision and to enable to shorten an etching time by a method wherein high-frequency voltage to be impressed on the sample stand is independently controlled without making the plasmatic situation fluctuate almost. CONSTITUTION:Discharge gas is introduced in, microwave are introduced in a vacuum container 3, of which the discharge space is formed, and the introduced discharge gas is brought into a plasmatic state. AC voltage is impressed on a sample stand 6 to hold a sample 7 to be treated with plasma in the container 3. At that time, the time to impress the AC voltage is controlled in such a way as to be within a time zone, during which plasma is involved in a treatment of the sample 7. Whereupon the high selection characteristics with the conventional base and the characteristics to reduce damage to inflict on the element are maintained. By this method, the improvement of a processing precision is contrived and an etching time is shortened.
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