| 摘要 |
PCT No. PCT/JP83/00100 Sec. 371 Date Nov. 25, 1983 Sec. 102(e) Date Nov. 25, 1983 PCT Filed Mar. 31, 1983 PCT Pub. No. WO83/03514 PCT Pub. Date Oct. 13, 1983.A solid state image pickup device comprises first switching elements (S'11 to S'mn) arrayed in horizontal and vertical rows and composed of a plurality of P-channel insulated-gate field-effect transistors, the first switching elements in each vertical row having one terminals connected in common, a photoelectric transducer layer (17) disposed over the horizontal and vertical rows of the first switching elements (S'11 to S'mn) and electrically connected to other terminals of the first switching elements (S'11 to S'mn), and a plurality of second switching elements (T1 to Tn) disposed respectively for the vertical rows of the first switching elements (S'11 to S'mn) and connected respectively to the one terminals connected in common of the first switching elements in the respective vertical rows, with the arrangement thereof wherein the horizontal rows of the first switching elements (S'11 to S'mn) are selectively energizable and the second switching elements (T1 to Tn) are selectively energizable to deliver signals based on signal charges generated by the photoelectric conversion layer (17) through the first and second switching elements (S'11 to S'mn, T1 to Tn) so as to produce an image pickup signal output.
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