| 摘要 |
PURPOSE:To dispense with a descum process by a method wherein far ultraviolet rays are irradiated on positive resist patterns to be formed by irradiating electron beams and resist residues on the peripheral parts of the patterns are removed. CONSTITUTION:A positive-type electron beam resist is applied on a substrate 1 and a resist film 2 is formed by making the electron beam resist dry. The positive-type resist to be used here is a resist such as a polyhalogenation alkyl methacrylate resist to need a descum process. Then, patterns are drawn with electron beams 3 and a developing is performed to obtain resist patterns 4. At this time, resist residues 5 are generated on the peripheral parts of the patterns 4. Subsequently, far ultraviolet rays 6 are irradiated on the whole surface. By this irradiation, the residues 5 are removed and resist patterns 7 having no resist residues are formed. Accordingly, the descum process for a dry etching becomes unnecessary. |
