| 摘要 |
PURPOSE:To reduce the virtual area occupied by strip wirings on a substrate surface by a method wherein strip wirings are formed on a substrate provided with a corrugated surface. CONSTITUTION:On a semi-insulating GaAs substrate 10, an N type activation layer is locally created, joining an FET formed thereon and strip wirings 12. Pior to the formation of said wirings 12, lines of grooves 11 are formed. In a circuit designed as such, the wiring length may be longer not only along the directions on the surface but also along a direction vertical to the surface. Accordingly, the virtual length of the strip wirings 12 on the substrate 10 is shortened, and the distance of two neighboring strip wirings 12 is reduced. A circuit of this design, different from one constructed on the technique of meandering in that the new design exerts less adverse influence due to stray capacity upon the signals being transmitted, realizes, a substrate requiring a smaller area. |
