发明名称 PREPARATION OF MAGNETIC BUBBLE MEMORY ELEMENT
摘要 PURPOSE:To convert the defect arising from the stain sticking to the surface of a wafer to a 'drop-out' defect of a soft magnetic film which is a good defect by forming a soft magnetic pattern by a lift-off method. CONSTITUTION:A polyimide layer 12 and an Al film 13 are formed on a crystal 10 for a valve formed with a spacer 11 and the film 13 is etched with a resist pattern 14 as a mask to form an Al pattern 13a. The layer 12 is then etched with the pattern 13a as a mask to form a nonmagnetic pattern 16 consisting of Al and polyimide resin and thereafter a 'Permalloy(R)' film 17 as the soft magnetic film is formed over the entire surface. The resin 12 is finally etched away, by which the Al film 13 and 'Permalloy(R)' film 17 thereon are removed as well and the intended 'Permalloy(R)' pattern 18 is formed. The point where there is the stain 15 is converted to the 'drop-out' defect 19.
申请公布号 JPS61104482(A) 申请公布日期 1986.05.22
申请号 JP19840223835 申请日期 1984.10.26
申请人 FUJITSU LTD 发明人 MAJIMA NIWAJI;YONEKURA YOSHIMICHI;YANASE TAKEYASU
分类号 G11C11/14;G11C19/08 主分类号 G11C11/14
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