发明名称 |
DRIVE CIRCUIT OF SWITCHING TRANSISTOR |
摘要 |
PURPOSE:To prevent a storage time from being increased at a light load and to prevent a loss from being increased at a heavy load by providing a steady- state base current path comprising resistors to a base circuit of a transistor (TR) and providing a series circuit comprising a capacitor and a diode connected in parallel with the resistor and an over drive current path comprising diodes connected between a common connection point of the capacitor and diode and a collector of the TR. CONSTITUTION:When the load is light, an over-drive current I is supplied to a base of a TRQ via a capacitor C and a diode D. Then the TRQ is saturated immediately. When the collector voltage is sufficiently low, the over drive current I is shunted to the diode D. Through the operation above, the quantity of over drive supplied to the base of the TRQ is balanced automatically and automonously to an optimum amount. |
申请公布号 |
JPS61101119(A) |
申请公布日期 |
1986.05.20 |
申请号 |
JP19840222699 |
申请日期 |
1984.10.23 |
申请人 |
YOKOGAWA HOKUSHIN ELECTRIC CORP |
发明人 |
INAO KIYOHARU;SAITO HITOSHI |
分类号 |
H03K17/04;H02M3/155;H03K17/0422;H03K17/60 |
主分类号 |
H03K17/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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