发明名称 DRIVE CIRCUIT OF SWITCHING TRANSISTOR
摘要 PURPOSE:To prevent a storage time from being increased at a light load and to prevent a loss from being increased at a heavy load by providing a steady- state base current path comprising resistors to a base circuit of a transistor (TR) and providing a series circuit comprising a capacitor and a diode connected in parallel with the resistor and an over drive current path comprising diodes connected between a common connection point of the capacitor and diode and a collector of the TR. CONSTITUTION:When the load is light, an over-drive current I is supplied to a base of a TRQ via a capacitor C and a diode D. Then the TRQ is saturated immediately. When the collector voltage is sufficiently low, the over drive current I is shunted to the diode D. Through the operation above, the quantity of over drive supplied to the base of the TRQ is balanced automatically and automonously to an optimum amount.
申请公布号 JPS61101119(A) 申请公布日期 1986.05.20
申请号 JP19840222699 申请日期 1984.10.23
申请人 YOKOGAWA HOKUSHIN ELECTRIC CORP 发明人 INAO KIYOHARU;SAITO HITOSHI
分类号 H03K17/04;H02M3/155;H03K17/0422;H03K17/60 主分类号 H03K17/04
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