| 摘要 |
PURPOSE:To conduct clean vapor-phase growth on a substrate on a susceptor having high permeability by elevating the temperature of the susceptor by a magnetic field from a device incorporated into the susceptor. CONSTITUTION:A wafer 4 is positioned onto a base 13, and a space on the wafer is evacuated. Cooling water is flowed through pipes 21, 22, and a reaction gas is introduced into a vessel 11. ACs are flowed through an electromagnet 20, the temperature of the base 13 is elevated by eddy currents, and the wafer is heated. Accordingly, the temperatures of other sections are hardly raised, and the temperature rise unnecessary section of a device is cooled forcibly, thus preventing vapor-phase growth at a low temperature in the unnecessary section, then generating no foreign matter by peeling, provided that clean vapor- phase growth can be conducted. |
