| 摘要 |
PURPOSE:To enable the appreciation of etching power of the resist removal solution by a method wherein the thinnest portion of resist of a resist film of different thickness is compared with other thicknesses of resist. CONSTITUTION:Preparing a semiconductor wafer 1 with a coat of resist 2 of different thickness, the reaction power of solution is confirmed by dipping this wafer in a removal solution to be examined for a fixed time. Here, the thinnest resist film is made equal to a film thickness used in the process of semiconductor manufacture. After a fixed-time dipping, only the thinnest film is removed through observation; in case part of the other portions of resist 2 remain, this resist removal solution is judged as losing the removing power. In this case, it is possible to set the numerical value of the smallest film thickness by previously determining the relation between the resist film thickness and the etching speed of part of resist removal. |
