| 摘要 |
PURPOSE:To prevent the increase in forward voltage drop, the decrease in hFE and the increase in leaking current from a bonded part, by forming introducing windows on the surface of a semiconductor substrate in a scattered mode, and introducing heavy metal to the inside including the vicinity of the bonded part of at least one conducting type material and a reverse conducting type material and the bonded region through the introducing windows. CONSTITUTION:A semiconductor substrate 1, whose crystal defect is about 1X10<3>/cm<2> or less, is inserted into high-temperature oxidizing atmosphere, and a silicon oxide film 6 is grown on the surface. Introducing windows 7 are formed in an emitter region 5 and in the vicinity of an emitter region 5 by a photoetching method in a scattering mode. Thus the introducing windows 7 are scattered in the semiconductor substrate 1 having the crystal defect, whose concentration is less than a specified value. Heavy metal 8 is introduced through the introducing windows 7 in the inside including the vicinity of the bonded part of one conducting type material 3 and the reverse conducting type material 5 and the bonded region. Thus the dispersion in characteristics of the semiconductor device is decreased, forward voltage drop is decreased, hFE is increased, and the leaking current from the junction part can be decreased. |
