发明名称 |
Method for manufacture of III-V group compound semiconductor single crystal |
摘要 |
A III-V group compound semiconductor single crystal is manufactured by a method which comprises adjusting the temperature of a fused layer of raw material for the crystal, based on the electric current signal flowing between a seed crystal and the fused layer of raw material for the crystal, the weight signal of the crystal, and the length signal of the crystal, to levels optimum for the growth of crystal during the contact of the seed crystal with the fused layer, during the formation of the shoulder part of the crystal, and during the formation of the barrel part of the crystal, respectively in the process of crystal growth.
|
申请公布号 |
US4586979(A) |
申请公布日期 |
1986.05.06 |
申请号 |
US19840596705 |
申请日期 |
1984.04.04 |
申请人 |
AGENCY OF INDUSTRIAL SCIENCE & TECHNOLOGY;MINISTRY OF INTERNATIONAL TRADE & INDUSTRY |
发明人 |
KATSUMATA, TOORU;TERASHIMA, KAZUTAKA;NAKAJIMA, HIROAKI;FUKUDA, TSUGUO |
分类号 |
C30B15/20;C30B15/28;(IPC1-7):C30B27/02 |
主分类号 |
C30B15/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|