Formation of single-crystal silicon layer by recrystallization.

摘要

Formation of a single-crystal silicon layer on an insulating film by recrystallization is disclosed. The seed silicon crystal is at first formed on such a portion of the insulating film that is thicker than the other portion on which the single-crystal layer is to be formed by recrystallization. A substrate made of a material having a high thermal conductivity is provided under the insulating film. The formation of the seed silicon crystal and recrystallization of the single-crystal silicon layer may be carried out by laser beam scanning to a polycrystalline silicon layer with a diameter and a power of the laser beam maintained unchanged.